Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures
n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2022-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac7512 |
| _version_ | 1797746348157566976 |
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| author | M A Zambrano-Serrano Carlos A Hernández O de Melo M Behar S Gallardo-Hernández Y L Casallas-Moreno A Ponce A Hernandez-Robles D Bahena-Uribe C M Yee-Rendón M López-López |
| author_facet | M A Zambrano-Serrano Carlos A Hernández O de Melo M Behar S Gallardo-Hernández Y L Casallas-Moreno A Ponce A Hernandez-Robles D Bahena-Uribe C M Yee-Rendón M López-López |
| author_sort | M A Zambrano-Serrano |
| collection | DOAJ |
| description | n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 10 ^19 atoms cm ^−3 . A particular mosaic structure was induced by the Si-doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples (1.3 × 10 ^20 atoms cm ^−3 ). |
| first_indexed | 2024-03-12T15:35:34Z |
| format | Article |
| id | doaj.art-9c09694f308f46ee8c6200add83c89d3 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:35:34Z |
| publishDate | 2022-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-9c09694f308f46ee8c6200add83c89d32023-08-09T16:13:48ZengIOP PublishingMaterials Research Express2053-15912022-01-019606590310.1088/2053-1591/ac7512Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructuresM A Zambrano-Serrano0Carlos A Hernández1O de Melo2M Behar3S Gallardo-Hernández4https://orcid.org/0000-0001-6968-5560Y L Casallas-Moreno5A Ponce6https://orcid.org/0000-0001-5529-6468A Hernandez-Robles7D Bahena-Uribe8C M Yee-Rendón9https://orcid.org/0000-0003-2397-9066M López-López10https://orcid.org/0000-0002-4647-6683Centro de Investigación y Estudios Avanzados del IPN, Apartado Postal 14-740, Ciudad de Mexico, 07360, MexicoTecnológico Nacional de México/Instituto Tecnológico de Tuxtla Gutiérrez , Carretera Panamericana km 1080, C.P. 29050, Tuxtla Gutiérrez, MexicoFacultad de Física, Universidad de la Habana , Colina Universitaria 10400. La Habana, CubaIon Implantation Laboratory, Physics Institute, Federal University of Rio Grande do Sul , CP 15051, CEP 91501-970, Porto Alegre, RS, BrazilCentro de Investigación y Estudios Avanzados del IPN, Apartado Postal 14-740, Ciudad de Mexico, 07360, MexicoCONACYT-Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas,Instituto Politécnico Nacional , Av. IPN 2580, Gustavo A. Madero, 07340 Ciudad de México, MexicoDepartment of Physics and Astronomy, University of Texas at San Antonio , San Antonio, Texas 78249, United States of AmericaDepartment of Physics and Astronomy, University of Texas at San Antonio , San Antonio, Texas 78249, United States of AmericaAdvanced Laboratory of Electron Nanoscopy, CINVESTAV, Av. IPN 2508, 07360 Mexico City, MexicoFacultad de Ciencias Fisico-Matematicas, Universidad Autonoma de Sinaloa , Cd. Universitaria, Culican SIN, 80000, MexicoCentro de Investigación y Estudios Avanzados del IPN, Apartado Postal 14-740, Ciudad de Mexico, 07360, Mexicon-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 10 ^19 atoms cm ^−3 . A particular mosaic structure was induced by the Si-doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples (1.3 × 10 ^20 atoms cm ^−3 ).https://doi.org/10.1088/2053-1591/ac7512GaNmolecular beam epitaxyheteroepitaxysiliconSi-dopingcrystal defects |
| spellingShingle | M A Zambrano-Serrano Carlos A Hernández O de Melo M Behar S Gallardo-Hernández Y L Casallas-Moreno A Ponce A Hernandez-Robles D Bahena-Uribe C M Yee-Rendón M López-López Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures Materials Research Express GaN molecular beam epitaxy heteroepitaxy silicon Si-doping crystal defects |
| title | Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
| title_full | Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
| title_fullStr | Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
| title_full_unstemmed | Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
| title_short | Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
| title_sort | effects of heavy si doping on the structural and optical properties of n gan aln si 111 heterostructures |
| topic | GaN molecular beam epitaxy heteroepitaxy silicon Si-doping crystal defects |
| url | https://doi.org/10.1088/2053-1591/ac7512 |
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