Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

This paper proposes a solid-state circuit breaker comprising silicon carbide (SiC) MOSFETs and a SiC diode, based on the principle of avalanche voltage clamping. The key challenge in realizing a solid-state circuit breaker lies in reducing conduction loss. A parallel connection of power semiconducto...

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Bibliographic Details
Main Authors: Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Avalanche breakdown
clamping component
parallel connection
silicon carbide
solid-state circuit breaker
unclamped inductive switching
Online Access:https://ieeexplore.ieee.org/document/10436368/

Internet

https://ieeexplore.ieee.org/document/10436368/

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