Transient transition from free carrier metallic state to exciton insulating state in GaAs by ultrafast photoexcitation
We present systematic studies of the transient dynamics of GaAs by ultrafast time-resolved reflectivity. In photoexcited non-equilibrium states, we found a sign reverse in reflectivity change Δ R / R , from positive around room temperature to negative at cryogenic temperatures. The former correspond...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2018-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/aaae54 |