InGaN as a Substrate for AC Photoelectrochemical Imaging

InGaN as a Substrate for AC Photoelectrochemical Imaging

AC photoelectrochemical imaging at electrolyte−semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and exp...

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Bibliographic Details
Main Authors: Bo Zhou, Anirban Das, Menno J. Kappers, Rachel A. Oliver, Colin J. Humphreys, Steffi Krause
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Sensors
Subjects:
photoelectrochemistry
ingan/gan epilayer
cell imaging
light-activated electrochemistry
light-addressable potentiometric sensor
Online Access:https://www.mdpi.com/1424-8220/19/20/4386

Internet

https://www.mdpi.com/1424-8220/19/20/4386

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