InGaN as a Substrate for AC Photoelectrochemical Imaging
AC photoelectrochemical imaging at electrolyte−semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and exp...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-10-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/19/20/4386 |
| _version_ | 1798000061815193600 |
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| author | Bo Zhou Anirban Das Menno J. Kappers Rachel A. Oliver Colin J. Humphreys Steffi Krause |
| author_facet | Bo Zhou Anirban Das Menno J. Kappers Rachel A. Oliver Colin J. Humphreys Steffi Krause |
| author_sort | Bo Zhou |
| collection | DOAJ |
| description | AC photoelectrochemical imaging at electrolyte−semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and experimentally shown to generate a considerable photocurrent under illumination with a 405 nm modulated diode laser at comparatively high frequencies and low applied DC potentials, making this a promising substrate for bioimaging applications. Linear sweep voltammetry showed negligible dark currents. The imaging capabilities of the sensor substrate were demonstrated with a model system and showed a lateral resolution of 7 microns. |
| first_indexed | 2024-04-11T11:14:17Z |
| format | Article |
| id | doaj.art-9c13b59d436040e5ada0c300f0b845c5 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-11T11:14:17Z |
| publishDate | 2019-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-9c13b59d436040e5ada0c300f0b845c52022-12-22T04:27:19ZengMDPI AGSensors1424-82202019-10-011920438610.3390/s19204386s19204386InGaN as a Substrate for AC Photoelectrochemical ImagingBo Zhou0Anirban Das1Menno J. Kappers2Rachel A. Oliver3Colin J. Humphreys4Steffi Krause5School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, UKSchool of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, UKDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UKDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UKSchool of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, UKSchool of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, UKAC photoelectrochemical imaging at electrolyte−semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and experimentally shown to generate a considerable photocurrent under illumination with a 405 nm modulated diode laser at comparatively high frequencies and low applied DC potentials, making this a promising substrate for bioimaging applications. Linear sweep voltammetry showed negligible dark currents. The imaging capabilities of the sensor substrate were demonstrated with a model system and showed a lateral resolution of 7 microns.https://www.mdpi.com/1424-8220/19/20/4386photoelectrochemistryingan/gan epilayercell imaginglight-activated electrochemistrylight-addressable potentiometric sensor |
| spellingShingle | Bo Zhou Anirban Das Menno J. Kappers Rachel A. Oliver Colin J. Humphreys Steffi Krause InGaN as a Substrate for AC Photoelectrochemical Imaging Sensors photoelectrochemistry ingan/gan epilayer cell imaging light-activated electrochemistry light-addressable potentiometric sensor |
| title | InGaN as a Substrate for AC Photoelectrochemical Imaging |
| title_full | InGaN as a Substrate for AC Photoelectrochemical Imaging |
| title_fullStr | InGaN as a Substrate for AC Photoelectrochemical Imaging |
| title_full_unstemmed | InGaN as a Substrate for AC Photoelectrochemical Imaging |
| title_short | InGaN as a Substrate for AC Photoelectrochemical Imaging |
| title_sort | ingan as a substrate for ac photoelectrochemical imaging |
| topic | photoelectrochemistry ingan/gan epilayer cell imaging light-activated electrochemistry light-addressable potentiometric sensor |
| url | https://www.mdpi.com/1424-8220/19/20/4386 |
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