Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

The instability in threshold voltage (<i>V<sub>TH</sub></i>) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the <i>V<sub>TH</sub&...

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Bibliographic Details
Main Authors: Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim, Jeong-Soo Lee
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Micromachines
Subjects:
3D NAND flash memory
noncircular cell
spike
TCAD simulation
threshold voltage distribution
trapped charge
Online Access:https://www.mdpi.com/2072-666X/14/11/2007

Internet

https://www.mdpi.com/2072-666X/14/11/2007

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