Formation mechanism, interface characteristics and the application of metal/SiC thin-film ohmic contact after high-temperature treatment
SiC, as a representative of the third generation semiconductors, is widely investigated in power devices and sensors. However, ohmic contacts, an important component for signal output of various SiC chips, have always faced challenges with unclear formation mechanism and difficulty to withstand high...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2023-05-01
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Series: | Journal of Materials Research and Technology |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S223878542300580X |