Formation mechanism, interface characteristics and the application of metal/SiC thin-film ohmic contact after high-temperature treatment

Formation mechanism, interface characteristics and the application of metal/SiC thin-film ohmic contact after high-temperature treatment

SiC, as a representative of the third generation semiconductors, is widely investigated in power devices and sensors. However, ohmic contacts, an important component for signal output of various SiC chips, have always faced challenges with unclear formation mechanism and difficulty to withstand high...

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Bibliographic Details
Main Authors:	Chen Wu, Xudong Fang, Qiang Kang, Ziyan Fang, Hao Sun, Dong Zhang, Libo Zhao, Bian Tian, Ryutaro Maeda, Zhuangde Jiang
Format:	Article
Language:	English
Published:	Elsevier 2023-05-01
Series:	Journal of Materials Research and Technology
Subjects:	Silicon carbide (SiC) Metal Ohmic contact Interface diffusion Anti-oxidation Barrier layer
Online Access:	http://www.sciencedirect.com/science/article/pii/S223878542300580X

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