Enhanced Performance of Organic Field‐Effect Transistor Memory by Hole‐Barrier Modulation with an N‐Type Organic Buffer Layer between Pentacene and Polymer Electret

Enhanced Performance of Organic Field‐Effect Transistor Memory by Hole‐Barrier Modulation with an N‐Type Organic Buffer Layer between Pentacene and Polymer Electret

Abstract Theoretical and experimental work has revealed that a positively charged insulator layer formed by oxygen‐related defects near pentacene–dielectric interface in organic field‐effect‐transistors (OFETs) severely affects their performance. A novel OFET memory structure with an n‐type organic...

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Bibliographic Details
Main Authors: Yiru Wang, Chao Lu, Limin Kang, Shangyang Shang, Jiang Yin, Xu Gao, Guoliang Yuan, Yidong Xia, Zhiguo Liu
Format: Article
Language:English
Published: Wiley-VCH 2020-04-01
Series:Advanced Electronic Materials
Subjects:
hole barrier
nonvolatile memory
organic field‐effect transistors
pentacene
polymers
Online Access:https://doi.org/10.1002/aelm.201901184

Internet

https://doi.org/10.1002/aelm.201901184

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