Tuning Stoichiometry for Enhanced Spin‐Charge Interconversion in Transition Metal Oxides

Tuning Stoichiometry for Enhanced Spin‐Charge Interconversion in Transition Metal Oxides

Abstract Interconversion of spin and charge current provides a key route for low‐power spin memory and logic devices. Recent advances have revealed efficient spin‐charge interconversion in 4d and 5d transition metal oxides. However, the strategies to tune the conversion efficiency, essential for the...

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Bibliographic Details
Main Authors: Hetian Chen, Dingsong Jiang, Qinghua Zhang, Yuhan Liang, Jingchun Liu, Aihua Tang, Yahong Chai, Pu Yu, Tianxiang Nan, Di Yi
Format: Article
Language:English
Published: Wiley-VCH 2024-04-01
Series:Advanced Electronic Materials
Subjects:
inverse spin Hall effect
off‐stoichiometry
spin‐to‐charge conversion
transition metal oxide
Online Access:https://doi.org/10.1002/aelm.202300666

Internet

https://doi.org/10.1002/aelm.202300666

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