ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

Abstract Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO x /TaN capacitors is proposed...

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Bibliographic Details
Main Authors: Siqing Zhang, Huan Liu, Jiuren Zhou, Yan Liu, Genquan Han, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2021-02-01
Series:Nanoscale Research Letters
Subjects:
Amorphous ZrO x
Ferroelectric
FET
Subthreshold swing
Negative capacitance
Online Access:https://doi.org/10.1186/s11671-020-03468-w

Internet

https://doi.org/10.1186/s11671-020-03468-w

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