ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
Abstract Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO x /TaN capacitors is proposed...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2021-02-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-020-03468-w |
| _version_ | 1797760301384335360 |
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| author | Siqing Zhang Huan Liu Jiuren Zhou Yan Liu Genquan Han Yue Hao |
| author_facet | Siqing Zhang Huan Liu Jiuren Zhou Yan Liu Genquan Han Yue Hao |
| author_sort | Siqing Zhang |
| collection | DOAJ |
| description | Abstract Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO x /TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrO x films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrO x -based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrO x . The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrO x NCFET is related to the partial switching of oxygen vacancy dipoles in the forward sweeping due to negative interfacial dipoles at the Al2O3/HfO2 interface. |
| first_indexed | 2024-03-12T18:56:37Z |
| format | Article |
| id | doaj.art-9c5d2e06974143ef8499868f2af091f0 |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T18:56:37Z |
| publishDate | 2021-02-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-9c5d2e06974143ef8499868f2af091f02023-08-02T06:49:45ZengSpringerOpenNanoscale Research Letters1556-276X2021-02-011611610.1186/s11671-020-03468-wZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing BehaviorSiqing Zhang0Huan Liu1Jiuren Zhou2Yan Liu3Genquan Han4Yue Hao5State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityAbstract Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO x /TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrO x films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrO x -based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrO x . The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrO x NCFET is related to the partial switching of oxygen vacancy dipoles in the forward sweeping due to negative interfacial dipoles at the Al2O3/HfO2 interface.https://doi.org/10.1186/s11671-020-03468-wAmorphous ZrO xFerroelectricFETSubthreshold swingNegative capacitance |
| spellingShingle | Siqing Zhang Huan Liu Jiuren Zhou Yan Liu Genquan Han Yue Hao ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior Nanoscale Research Letters Amorphous ZrO x Ferroelectric FET Subthreshold swing Negative capacitance |
| title | ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior |
| title_full | ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior |
| title_fullStr | ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior |
| title_full_unstemmed | ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior |
| title_short | ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior |
| title_sort | zro x negative capacitance field effect transistor with sub 60 subthreshold swing behavior |
| topic | Amorphous ZrO x Ferroelectric FET Subthreshold swing Negative capacitance |
| url | https://doi.org/10.1186/s11671-020-03468-w |
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