Enhancement of Conformality of Silicon Nitride Thin Films by ABC‐Type Atomic Layer Deposition
Abstract Atomic layer deposition (ALD) is utilized for the fabrication of miniaturized electronic devices with nanometer‐scale features. However, the conventional ALD process on high‐aspect‐ratio (HAR) substrates often results in the deposition of thin films with suboptimal conformality over the dep...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-03-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300722 |