Metal–Insulator Transition in Three-Dimensional Semiconductors
We use a random gap model to describe a metal−insulator transition in three-dimensional semiconductors due to doping, and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry breaking results in metallic behavior, whereas th...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-11-01
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| Series: | Symmetry |
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| Online Access: | https://www.mdpi.com/2073-8994/11/11/1345 |