Physical origins of current and temperature controlled negative differential resistances in NbO2

Physical origins of current and temperature controlled negative differential resistances in NbO2

The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of negative differential resistance in NbO2 memristors.

Xehetasun bibliografikoak
Egile Nagusiak: Suhas Kumar, Ziwen Wang, Noraica Davila, Niru Kumari, Kate J. Norris, Xiaopeng Huang, John Paul Strachan, David Vine, A.L. David Kilcoyne, Yoshio Nishi, R. Stanley Williams
Formatua: Artikulua
Hizkuntza:English
Argitaratua: Nature Portfolio 2017-09-01
Saila:Nature Communications
Sarrera elektronikoa:https://doi.org/10.1038/s41467-017-00773-4

Internet

https://doi.org/10.1038/s41467-017-00773-4

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