Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors
ABSTRACTOwing to its wide bandgap (3.4 eV) and high electron mobility, GaN has attracted significant attention for applications in solar cells, power transistors, and high-electron-mobility transistors. Crystallized GaN thin film can be hardly prepared in thin film form by employing physical vapor d...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2023-01-01
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| Series: | Journal of Asian Ceramic Societies |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/21870764.2022.2151102 |