Prediction Procedure of Parasitic Parameters Considering Laminated Bus Bar Geometries Based on Online Machine Learning
The development of SiC and GaN power devices to achieve high-speed switching operations in power converter circuits is underway. The stray inductance caused by the bus bar geometries between DC capacitors and power devices influences high-speed switching circuits, such as surge voltages and switchin...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2023-01-01
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Series: | IEEE Open Journal of Power Electronics |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10149472/ |