Prediction Procedure of Parasitic Parameters Considering Laminated Bus Bar Geometries Based on Online Machine Learning

The development of SiC and GaN power devices to achieve high-speed switching operations in power converter circuits is underway. The stray inductance caused by the bus bar geometries between DC capacitors and power devices influences high-speed switching circuits, such as surge voltages and switchin...

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Bibliographic Details
Main Authors: Ryosuke Shigetomi, Keiji Wada
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10149472/