Silicon-germanium for ULSI
The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the desired performance advantages are described...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
National Institute of Telecommunications
2000-12-01
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| Series: | Journal of Telecommunications and Information Technology |
| Subjects: | |
| Online Access: | https://jtit.pl/jtit/article/view/33 |