Proton irradiation damage in silicon carbide junction barrier Schottky diode

Proton irradiation damage in silicon carbide junction barrier Schottky diode

BackgroundSilicon carbide junction barrier Schottky (SiC JBS) diode is a kind of power device based on wide bandgap semiconductor. SiC JBS diode is expected to become an important part of electric propulsion systems in the radiation application field in the future space exploration due to its excell...

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Bibliographic Details
Main Authors: LIU Cuicui, LI Zhiming, HAN Jinhua, GUO Gang, YIN Qian, ZHANG Yanwen, LIU Jiancheng
Format: Article
Language:zho
Published: Science Press 2023-02-01
Series:He jishu
Subjects:
sic jbs
intermediate energy proton
radiation effect
electrical performance
deep level defect
Online Access:http://www.hjs.sinap.ac.cn/thesisDetails#10.11889/j.0253-3219.2023.hjs.46.020203&lang=zh

Internet

http://www.hjs.sinap.ac.cn/thesisDetails#10.11889/j.0253-3219.2023.hjs.46.020203&lang=zh

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