Dependence of the Hall Mobility and Carrier Concentration on Thickness and Annealing Temperature
Hall effect measurements have been made on a-As2Te3 thin films different thickness film in the range (200-350) nm. The Hall mobility in a-As2Te3 thin films decreases with increasing annealing temperature but the carrier concentration increases. When increasing the film thickness increases the Hall...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2002-12-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/957 |