Multibridge VO2‐Based Resistive Switching Devices in a Two‐Terminal Configuration

Multibridge VO2‐Based Resistive Switching Devices in a Two‐Terminal Configuration

Abstract Vanadium dioxide exhibits a hysteretic insulator‐to‐metal transition (IMT) near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two‐terminal bridge‐like structures. The authors show here that by incorporat...

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Bibliographic Details
Main Authors: Xing Gao, Thijs J. Roskamp, Timm Swoboda, Carlos M. M. Rosário, Sander Smink, Miguel Muñoz Rojo, Hans Hilgenkamp
Format: Article
Language:English
Published: Wiley-VCH 2023-12-01
Series:Advanced Electronic Materials
Subjects:
electrically driven insulator‐to‐metal transition
multilevel operation
resistive switching
scanning thermal microscopy
thermal cross‐talk
vanadium dioxide
Online Access:https://doi.org/10.1002/aelm.202300304

Internet

https://doi.org/10.1002/aelm.202300304

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