Multibridge VO2‐Based Resistive Switching Devices in a Two‐Terminal Configuration
Abstract Vanadium dioxide exhibits a hysteretic insulator‐to‐metal transition (IMT) near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two‐terminal bridge‐like structures. The authors show here that by incorporat...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-12-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300304 |