Electrical Characterizations of Planar Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes

Electrical Characterizations of Planar Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes

In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga<sub>2</sub>O<sub>3</sub> crystal substrate. At the current stage, for high resistance un-doped Ga<sub>2</sub>O<sub>3</sub> fil...

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Bibliographic Details
Main Authors: Shiyu Zhang, Zeng Liu, Yuanyuan Liu, Yusong Zhi, Peigang Li, Zhenping Wu, Weihua Tang
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Micromachines
Subjects:
Ga<sub>2</sub>O<sub>3</sub>
Schottky diode
I–V
C–V
Online Access:https://www.mdpi.com/2072-666X/12/3/259

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https://www.mdpi.com/2072-666X/12/3/259

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