Electrical Characterizations of Planar Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes

Electrical Characterizations of Planar Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes

In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga<sub>2</sub>O<sub>3</sub> crystal substrate. At the current stage, for high resistance un-doped Ga<sub>2</sub>O<sub>3</sub> fil...

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Bibliographic Details
Main Authors:	Shiyu Zhang, Zeng Liu, Yuanyuan Liu, Yusong Zhi, Peigang Li, Zhenping Wu, Weihua Tang
Format:	Article
Language:	English
Published:	MDPI AG 2021-03-01
Series:	Micromachines
Subjects:	Ga<sub>2</sub>O<sub>3</sub> Schottky diode I–V C–V
Online Access:	https://www.mdpi.com/2072-666X/12/3/259

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