Vertical GaN MOSFET Power Devices

Vertical GaN MOSFET Power Devices

Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the...

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Bibliographic Details
Main Authors: Catherine Langpoklakpam, An-Chen Liu, Yi-Kai Hsiao, Chun-Hsiung Lin, Hao-Chung Kuo
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Micromachines
Subjects:
GaN power device
MOSFET
breakdown voltage
specific on-resistance
electric field
Online Access:https://www.mdpi.com/2072-666X/14/10/1937

Internet

https://www.mdpi.com/2072-666X/14/10/1937

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