Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions

Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions

Abstract Pt/Nd:SrTiO3 (STO)/In devices were fabricated by depositing Schottky-contact Pt and Ohmic-contact In electrodes on a single crystal STO with Nd doping. The Pt/Nd:STO/In devices show multi-level resistance-switching (RS) memory and memory-state-dependent photovoltage (PV) effects, which can...

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Bibliographic Details
Main Authors: Shengkai Wang, Xianwen Sun, Guanghui Li, Caihong Jia, Guoqiang Li, Weifeng Zhang
Format: Article
Language:English
Published: SpringerOpen 2018-01-01
Series:Nanoscale Research Letters
Subjects:
Resistive switching
Interface state
Multi-level memory
Photovoltage
Online Access:http://link.springer.com/article/10.1186/s11671-018-2433-5

Internet

http://link.springer.com/article/10.1186/s11671-018-2433-5

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