High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics

High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics

Concurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped Hf<sub>0.25</sub...

Full description

Bibliographic Details
Main Authors: Yuli He, Guang Zheng, Bao Zhu, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi-Jin Ding
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Nanomaterials
Subjects:
Al-doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub>
antiferroelectric
energy storage density
energy storage efficiency
Online Access:https://www.mdpi.com/2079-4991/13/11/1765

Internet

https://www.mdpi.com/2079-4991/13/11/1765

Similar Items