High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics
Concurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped Hf<sub>0.25</sub...
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| Format: | Article |
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MDPI AG
2023-05-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/11/1765 |
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| author | Yuli He Guang Zheng Bao Zhu Xiaohan Wu Wen-Jun Liu David Wei Zhang Shi-Jin Ding |
| author_facet | Yuli He Guang Zheng Bao Zhu Xiaohan Wu Wen-Jun Liu David Wei Zhang Shi-Jin Ding |
| author_sort | Yuli He |
| collection | DOAJ |
| description | Concurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> (HfZrO:Al) dielectrics together with an ultrathin (1 nm) Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> underlying layer. By optimizing the Al concentration in the AFE layer with the help of accurate controllability of the atomic layer deposition technique, an ultrahigh ESD of 81.4 J cm<sup>−3</sup> and a perfect energy storage efficiency (ESE) of 82.9% are simultaneously achieved for the first time in the case of the Al/(Hf + Zr) ratio of 1/16. Meanwhile, both the ESD and ESE exhibit excellent electric field cycling endurance within 10<sup>9</sup> cycles under 5~5.5 MV cm<sup>−1</sup>, and robust thermal stability up to 200 °C. Thus, the fabricated capacitor is very promising for on-chip energy storage applications due to favorable integratability with the standard complementary metal–oxide–semiconductor (CMOS) process. |
| first_indexed | 2024-03-11T03:00:54Z |
| format | Article |
| id | doaj.art-9d439c938ed94be8b2df0be2afe15d6a |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T03:00:54Z |
| publishDate | 2023-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-9d439c938ed94be8b2df0be2afe15d6a2023-11-18T08:19:13ZengMDPI AGNanomaterials2079-49912023-05-011311176510.3390/nano13111765High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as DielectricsYuli He0Guang Zheng1Bao Zhu2Xiaohan Wu3Wen-Jun Liu4David Wei Zhang5Shi-Jin Ding6School of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaConcurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> (HfZrO:Al) dielectrics together with an ultrathin (1 nm) Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> underlying layer. By optimizing the Al concentration in the AFE layer with the help of accurate controllability of the atomic layer deposition technique, an ultrahigh ESD of 81.4 J cm<sup>−3</sup> and a perfect energy storage efficiency (ESE) of 82.9% are simultaneously achieved for the first time in the case of the Al/(Hf + Zr) ratio of 1/16. Meanwhile, both the ESD and ESE exhibit excellent electric field cycling endurance within 10<sup>9</sup> cycles under 5~5.5 MV cm<sup>−1</sup>, and robust thermal stability up to 200 °C. Thus, the fabricated capacitor is very promising for on-chip energy storage applications due to favorable integratability with the standard complementary metal–oxide–semiconductor (CMOS) process.https://www.mdpi.com/2079-4991/13/11/1765Al-doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub>antiferroelectricenergy storage densityenergy storage efficiency |
| spellingShingle | Yuli He Guang Zheng Bao Zhu Xiaohan Wu Wen-Jun Liu David Wei Zhang Shi-Jin Ding High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics Nanomaterials Al-doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> antiferroelectric energy storage density energy storage efficiency |
| title | High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics |
| title_full | High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics |
| title_fullStr | High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics |
| title_full_unstemmed | High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics |
| title_short | High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics |
| title_sort | high performance on chip energy storage capacitors with plasma enhanced atomic layer deposited hf sub 0 5 sub zr sub 0 5 sub o sub 2 sub al doped hf sub 0 25 sub zr sub 0 75 sub o sub 2 sub nanofilms as dielectrics |
| topic | Al-doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> antiferroelectric energy storage density energy storage efficiency |
| url | https://www.mdpi.com/2079-4991/13/11/1765 |
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