Crystalline Silicon (c-Si) Solar Cell Interconnect Damage Prediction Function Based on Effect of Temperature Ramps and Dwells on Creep Damage under Field Thermal Cycling

Crystalline Silicon (c-Si) Solar Cell Interconnect Damage Prediction Function Based on Effect of Temperature Ramps and Dwells on Creep Damage under Field Thermal Cycling

c-Si solar cell interconnection damages from thermal cycles emanate from cumulative damage contributions from the various load steps in a typical thermal cycle. In general, a typical thermal cycle involves five thermal load steps, namely: 1st cold dwell, ramp-up, hot dwell, ramp-down, and 2nd cold d...

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Bibliographic Details
Main Authors: Frank Kwabena Afriyie Nyarko, Gabriel Takyi, Anthony Agyei Agyemang, Charles Kofi Kafui Sekyere
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Crystals
Subjects:
cold dwell
ramp-up
ramp-down
hot-dwell
accumulated creep energy density
interconnect damage
Online Access:https://www.mdpi.com/2073-4352/11/6/633

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https://www.mdpi.com/2073-4352/11/6/633

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