Reconsideration of Nanowire Growth Theory at Low Temperatures
We present a growth model that describes the nanowire length and radius versus time in the absence of evaporation or scattering of semiconductor atoms (group III atoms in the case of III-V NWs) from the substrate, nanowire sidewalls or catalyst nanoparticle. The model applies equally well to low-tem...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/9/2378 |