High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications
In this study, the deuterium passivation effect of silicon nitride (Si<sub>3</sub>N<sub>4</sub>) on data retention characteristics is investigated in a Metal-Nitride-Oxide-Silicon (MNOS) memory device. To focus on trap passivation in Si<sub>3</sub>N<sub>4<...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-10-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/11/1316 |