Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm...

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Bibliographic Details
Main Authors: Jangyup Son, Junyoung Kwon, SunPhil Kim, Yinchuan Lv, Jaehyung Yu, Jong-Young Lee, Huije Ryu, Kenji Watanabe, Takashi Taniguchi, Rita Garrido-Menacho, Nadya Mason, Elif Ertekin, Pinshane Y. Huang, Gwan-Hyoung Lee, Arend M. van der Zande
Format: Article
Language:English
Published: Nature Portfolio 2018-09-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-018-06524-3

Internet

https://doi.org/10.1038/s41467-018-06524-3

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