Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm...
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Bibliographic Details
| Main Authors: |
Jangyup Son,
Junyoung Kwon,
SunPhil Kim,
Yinchuan Lv,
Jaehyung Yu,
Jong-Young Lee,
Huije Ryu,
Kenji Watanabe,
Takashi Taniguchi,
Rita Garrido-Menacho,
Nadya Mason,
Elif Ertekin,
Pinshane Y. Huang,
Gwan-Hyoung Lee,
Arend M. van der Zande |
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| Format: | Article
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| Language: | English |
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| Published: |
Nature Portfolio
2018-09-01
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| Series: | Nature Communications
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| Online Access: | https://doi.org/10.1038/s41467-018-06524-3
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