Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2018-09-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-018-06524-3 |
| _version_ | 1819195821924548608 |
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| author | Jangyup Son Junyoung Kwon SunPhil Kim Yinchuan Lv Jaehyung Yu Jong-Young Lee Huije Ryu Kenji Watanabe Takashi Taniguchi Rita Garrido-Menacho Nadya Mason Elif Ertekin Pinshane Y. Huang Gwan-Hyoung Lee Arend M. van der Zande |
| author_facet | Jangyup Son Junyoung Kwon SunPhil Kim Yinchuan Lv Jaehyung Yu Jong-Young Lee Huije Ryu Kenji Watanabe Takashi Taniguchi Rita Garrido-Menacho Nadya Mason Elif Ertekin Pinshane Y. Huang Gwan-Hyoung Lee Arend M. van der Zande |
| author_sort | Jangyup Son |
| collection | DOAJ |
| description | Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm |
| first_indexed | 2024-12-23T02:18:51Z |
| format | Article |
| id | doaj.art-9e00e5db8f0e48bf96f67c820d1c2ba7 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-12-23T02:18:51Z |
| publishDate | 2018-09-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-9e00e5db8f0e48bf96f67c820d1c2ba72022-12-21T18:03:36ZengNature PortfolioNature Communications2041-17232018-09-01911910.1038/s41467-018-06524-3Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructuresJangyup Son0Junyoung Kwon1SunPhil Kim2Yinchuan Lv3Jaehyung Yu4Jong-Young Lee5Huije Ryu6Kenji Watanabe7Takashi Taniguchi8Rita Garrido-Menacho9Nadya Mason10Elif Ertekin11Pinshane Y. Huang12Gwan-Hyoung Lee13Arend M. van der Zande14Department of Mechanical Science and Engineering, University of Illinois at Urbana-ChampaignDepartment of Materials Science and Engineering, Yonsei UniversityDepartment of Mechanical Science and Engineering, University of Illinois at Urbana-ChampaignDepartment of Physics, University of Illinois at Urbana-ChampaignDepartment of Mechanical Science and Engineering, University of Illinois at Urbana-ChampaignDepartment of Materials Science and Engineering, Yonsei UniversityDepartment of Materials Science and Engineering, Yonsei UniversityNational Institute for Materials ScienceNational Institute for Materials ScienceDepartment of Physics, University of Illinois at Urbana-ChampaignDepartment of Physics, University of Illinois at Urbana-ChampaignDepartment of Mechanical Science and Engineering, University of Illinois at Urbana-ChampaignFrederick Seitz Materials Research Laboratory, University of Illinois at Urbana-ChampaignDepartment of Materials Science and Engineering, Yonsei UniversityDepartment of Mechanical Science and Engineering, University of Illinois at Urbana-ChampaignFabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µmhttps://doi.org/10.1038/s41467-018-06524-3 |
| spellingShingle | Jangyup Son Junyoung Kwon SunPhil Kim Yinchuan Lv Jaehyung Yu Jong-Young Lee Huije Ryu Kenji Watanabe Takashi Taniguchi Rita Garrido-Menacho Nadya Mason Elif Ertekin Pinshane Y. Huang Gwan-Hyoung Lee Arend M. van der Zande Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures Nature Communications |
| title | Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
| title_full | Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
| title_fullStr | Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
| title_full_unstemmed | Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
| title_short | Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
| title_sort | atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
| url | https://doi.org/10.1038/s41467-018-06524-3 |
| work_keys_str_mv | AT jangyupson atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT junyoungkwon atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT sunphilkim atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT yinchuanlv atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT jaehyungyu atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT jongyounglee atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT huijeryu atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT kenjiwatanabe atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT takashitaniguchi atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT ritagarridomenacho atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT nadyamason atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT elifertekin atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT pinshaneyhuang atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT gwanhyounglee atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures AT arendmvanderzande atomicallyprecisegrapheneetchstopsforthreedimensionalintegratedsystemsfromtwodimensionalmaterialheterostructures |