Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2018-09-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-018-06524-3 |