High Al-content AlGaN channel high electron mobility transistors on silicon substrate

High Al-content AlGaN channel high electron mobility transistors on silicon substrate

The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for radio frequency (RF) and high voltage switching applications. Emerging AlxGa1-xN...

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Bibliographic Details
Main Authors: J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, F. Medjdoub
Format: Article
Language:English
Published: Elsevier 2023-03-01
Series:e-Prime: Advances in Electrical Engineering, Electronics and Energy
Subjects:
AlGaN-on-Si
AlGaN channel
UWBG
HEMT
Online Access:http://www.sciencedirect.com/science/article/pii/S2772671123000098

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http://www.sciencedirect.com/science/article/pii/S2772671123000098

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