High Al-content AlGaN channel high electron mobility transistors on silicon substrate
The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for radio frequency (RF) and high voltage switching applications. Emerging AlxGa1-xN...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-03-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671123000098 |
| _version_ | 1797871475025248256 |
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| author | J. Mehta I. Abid J. Bassaler J. Pernot P. Ferrandis M. Nemoz Y. Cordier S. Rennesson S. Tamariz F. Semond F. Medjdoub |
| author_facet | J. Mehta I. Abid J. Bassaler J. Pernot P. Ferrandis M. Nemoz Y. Cordier S. Rennesson S. Tamariz F. Semond F. Medjdoub |
| author_sort | J. Mehta |
| collection | DOAJ |
| description | The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for radio frequency (RF) and high voltage switching applications. Emerging AlxGa1-xN channel based heterostructures are promising to enhance the limits of next generation high voltage GaN power switching devices. In this work, we report on the study of electrical performance of AlGaN channel HEMTs-on-Silicon using various Al content. The fabricated devices exhibited outstanding buffer breakdown electric field above 2.5 MV/cm considering the submicron thin heterostructures grown on silicon substrate. Furthermore, we also experimentally demonstrate high temperature operation of fabricated AlGaN channel HEMTs. |
| first_indexed | 2024-04-10T00:44:11Z |
| format | Article |
| id | doaj.art-9e24a36c7da24acd820dbbc7ad439ee9 |
| institution | Directory Open Access Journal |
| issn | 2772-6711 |
| language | English |
| last_indexed | 2024-04-10T00:44:11Z |
| publishDate | 2023-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| spelling | doaj.art-9e24a36c7da24acd820dbbc7ad439ee92023-03-14T04:09:21ZengElseviere-Prime: Advances in Electrical Engineering, Electronics and Energy2772-67112023-03-013100114High Al-content AlGaN channel high electron mobility transistors on silicon substrateJ. Mehta0I. Abid1J. Bassaler2J. Pernot3P. Ferrandis4M. Nemoz5Y. Cordier6S. Rennesson7S. Tamariz8F. Semond9F. Medjdoub10IEMN, CNRS, Université de Lille, 59650 Villeneuve d'Ascq, France; Corresponding author.IEMN, CNRS, Université de Lille, 59650 Villeneuve d'Ascq, FranceCNRS, Grenoble INP, Institut Néel, Université Grenoble Alpes, 38000 Grenoble, FranceCNRS, Grenoble INP, Institut Néel, Université Grenoble Alpes, 38000 Grenoble, FranceCNRS, Institut Néel, Université de Toulon, Université Grenoble Alpes, 38000 Grenoble, FranceCNRS, CRHEA, Université Côte d'Azur, rue Bernard Grégory, 06560 Valbonne, FranceCNRS, CRHEA, Université Côte d'Azur, rue Bernard Grégory, 06560 Valbonne, FranceEasyGAN SAS, Rue Bernard Grégory, 06905 Sophia Antipolis Cedex, FranceCNRS, CRHEA, Université Côte d'Azur, rue Bernard Grégory, 06560 Valbonne, FranceCNRS, CRHEA, Université Côte d'Azur, rue Bernard Grégory, 06560 Valbonne, FranceIEMN, CNRS, Université de Lille, 59650 Villeneuve d'Ascq, FranceThe rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for radio frequency (RF) and high voltage switching applications. Emerging AlxGa1-xN channel based heterostructures are promising to enhance the limits of next generation high voltage GaN power switching devices. In this work, we report on the study of electrical performance of AlGaN channel HEMTs-on-Silicon using various Al content. The fabricated devices exhibited outstanding buffer breakdown electric field above 2.5 MV/cm considering the submicron thin heterostructures grown on silicon substrate. Furthermore, we also experimentally demonstrate high temperature operation of fabricated AlGaN channel HEMTs.http://www.sciencedirect.com/science/article/pii/S2772671123000098AlGaN-on-SiAlGaN channelUWBGHEMT |
| spellingShingle | J. Mehta I. Abid J. Bassaler J. Pernot P. Ferrandis M. Nemoz Y. Cordier S. Rennesson S. Tamariz F. Semond F. Medjdoub High Al-content AlGaN channel high electron mobility transistors on silicon substrate e-Prime: Advances in Electrical Engineering, Electronics and Energy AlGaN-on-Si AlGaN channel UWBG HEMT |
| title | High Al-content AlGaN channel high electron mobility transistors on silicon substrate |
| title_full | High Al-content AlGaN channel high electron mobility transistors on silicon substrate |
| title_fullStr | High Al-content AlGaN channel high electron mobility transistors on silicon substrate |
| title_full_unstemmed | High Al-content AlGaN channel high electron mobility transistors on silicon substrate |
| title_short | High Al-content AlGaN channel high electron mobility transistors on silicon substrate |
| title_sort | high al content algan channel high electron mobility transistors on silicon substrate |
| topic | AlGaN-on-Si AlGaN channel UWBG HEMT |
| url | http://www.sciencedirect.com/science/article/pii/S2772671123000098 |
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