Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors
In this paper, we present an artificial neural network (ANN)-based compact model to evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been highlighted as a next-generation nano-device. To extract data reflecting the accurate physical characteristics of NSFETs, th...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-09-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/17/2761 |