Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors

Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors

In this paper, we present an artificial neural network (ANN)-based compact model to evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been highlighted as a next-generation nano-device. To extract data reflecting the accurate physical characteristics of NSFETs, th...

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Bibliographic Details
Main Authors:	SangMin Woo, HyunJoon Jeong, JinYoung Choi, HyungMin Cho, Jeong-Taek Kong, SoYoung Kim
Format:	Article
Language:	English
Published:	MDPI AG 2022-09-01
Series:	Electronics
Subjects:	artificial neural network compact model nanosheet FETs TCAD/SPICE simulation
Online Access:	https://www.mdpi.com/2079-9292/11/17/2761

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