Theoretical and Experimental Studies on Material Gain for Wide Polar InGaN Quantum Well‐Mechanism Leading to Electric Field Screening and Lasing
Abstract The width of polar InGaN quantum wells (QWs) is usually limited to a few nanometers to ensure a sufficient overlap between the wave functions of the ground electron and hole state. This paper presents the results of material gain measurements for thin (2.6 nm), wide (10.4 nm), and extremely...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-10-01
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| Series: | Advanced Physics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/apxr.202200107 |