Manipulation of magnetic state in phosphorene layer by non-magnetic impurity doping

Using the full-potential linearized augmented plane wave method, we have explored the structural, electronic band structure, binding energy, and magnetic properties of a non-magnetic impurity (Al, Si, S, and Cl) doped phosphorene layer. The binding energy showed a tendency to decrease with increasin...

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Bibliographic Details
Main Authors: Imran Khan, Jisang Hong
Format: Article
Language:English
Published: IOP Publishing 2015-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/17/2/023056