High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

In this work, an experimental evaluation of Gate-Induce Drain Leakage (GIDL) current is presented for nanowire and nanosheet-based SOI transistors. The effects of fin width and temperature increase are studied. Obtained results indicate that the increase in device width makes the GIDL current more s...

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Bibliographic Details
Main Authors: Michelly De Souza, Antonio Cerdeira, Magali Estrada, Sylvain Barraud, Mikael Casse, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GIDL
high temperature
nanosheet MOSFET
nanowire MOSFET
SOI
Online Access:https://ieeexplore.ieee.org/document/10092852/

Internet

https://ieeexplore.ieee.org/document/10092852/

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