Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy
The influence of In on the growth of ɛ-Ga2O3 by plasma-assisted molecular beam epitaxy is investigated. We demonstrate alloying of ɛ-Ga2O3 with In and describe its incorporation limits and catalytic effect on the growth kinetics. A special focus lies on the metal-rich growth regime, where we show th...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0167736 |