Boosting RRAM-Based Mixed-Signal Accelerators in FD-SOI Technology for ML Applications
This article presents the flipped (F)-2T2R resistive random access memory (RRAM) compute cell enhancing the performance of RRAM-based mixed-signal accelerators for deep neural networks (DNNs) in machine-learning (ML) applications. The F-2T2R cell is designed to exploit the features of the FD-SOI tec...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2023-01-01
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Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10233848/ |