Physical Insights into THz Rectification in Metal–Oxide–Semiconductor Transistors
Metal–oxide–semiconductor field-effect transistors (MOSFETs) have proven to be effective devices for rectifying electromagnetic radiation at extremely high frequencies, approximately 1 THz. This paper presents a new interpretation of the THz rectification process in the structure of an MOS transisto...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-03-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/13/7/1192 |