Physical Insights into THz Rectification in Metal–Oxide–Semiconductor Transistors
Metal–oxide–semiconductor field-effect transistors (MOSFETs) have proven to be effective devices for rectifying electromagnetic radiation at extremely high frequencies, approximately 1 THz. This paper presents a new interpretation of the THz rectification process in the structure of an MOS transisto...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-03-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/13/7/1192 |
| _version_ | 1797212721043734528 |
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| author | Fabrizio Palma |
| author_facet | Fabrizio Palma |
| author_sort | Fabrizio Palma |
| collection | DOAJ |
| description | Metal–oxide–semiconductor field-effect transistors (MOSFETs) have proven to be effective devices for rectifying electromagnetic radiation at extremely high frequencies, approximately 1 THz. This paper presents a new interpretation of the THz rectification process in the structure of an MOS transistor. The rectification depends on the nonlinear effect of the carrier dynamics. The paper shows that the so-called self-mixing effect occurs within the interface region between the source and the channel. The basic tool used numerical TCAD simulations, which offer a direct interpretation of different aspects of this interaction. The complex, 2D effect is examined in terms of its basic aspects by comparing the MOS structure with a simplified case study structure. We demonstrate that a contribution to the output-rectified voltage detectable at the drain arises from the charging of the drain well capacitance due to the diffusion of excess electrons from the self-mixing interaction occurring at the source barrier. In addition, the paper provides a quantitative description of the rectification process through the definition of the output equivalent circuit, offering a new perspective for the design of detection systems. |
| first_indexed | 2024-04-24T10:46:53Z |
| format | Article |
| id | doaj.art-9e9cf8dbb4b645e5870ee8b95bcb10d6 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-24T10:46:53Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-9e9cf8dbb4b645e5870ee8b95bcb10d62024-04-12T13:17:01ZengMDPI AGElectronics2079-92922024-03-01137119210.3390/electronics13071192Physical Insights into THz Rectification in Metal–Oxide–Semiconductor TransistorsFabrizio Palma0Dipartimento di Ingegneria dell’Informazione, Elettronica e Telecomunicazione, Rome University La Sapienza, 00185 Rome, ItalyMetal–oxide–semiconductor field-effect transistors (MOSFETs) have proven to be effective devices for rectifying electromagnetic radiation at extremely high frequencies, approximately 1 THz. This paper presents a new interpretation of the THz rectification process in the structure of an MOS transistor. The rectification depends on the nonlinear effect of the carrier dynamics. The paper shows that the so-called self-mixing effect occurs within the interface region between the source and the channel. The basic tool used numerical TCAD simulations, which offer a direct interpretation of different aspects of this interaction. The complex, 2D effect is examined in terms of its basic aspects by comparing the MOS structure with a simplified case study structure. We demonstrate that a contribution to the output-rectified voltage detectable at the drain arises from the charging of the drain well capacitance due to the diffusion of excess electrons from the self-mixing interaction occurring at the source barrier. In addition, the paper provides a quantitative description of the rectification process through the definition of the output equivalent circuit, offering a new perspective for the design of detection systems.https://www.mdpi.com/2079-9292/13/7/1192THz detectorsreceiver systemsemiconductor device modelingterahertz radiation |
| spellingShingle | Fabrizio Palma Physical Insights into THz Rectification in Metal–Oxide–Semiconductor Transistors Electronics THz detectors receiver system semiconductor device modeling terahertz radiation |
| title | Physical Insights into THz Rectification in Metal–Oxide–Semiconductor Transistors |
| title_full | Physical Insights into THz Rectification in Metal–Oxide–Semiconductor Transistors |
| title_fullStr | Physical Insights into THz Rectification in Metal–Oxide–Semiconductor Transistors |
| title_full_unstemmed | Physical Insights into THz Rectification in Metal–Oxide–Semiconductor Transistors |
| title_short | Physical Insights into THz Rectification in Metal–Oxide–Semiconductor Transistors |
| title_sort | physical insights into thz rectification in metal oxide semiconductor transistors |
| topic | THz detectors receiver system semiconductor device modeling terahertz radiation |
| url | https://www.mdpi.com/2079-9292/13/7/1192 |
| work_keys_str_mv | AT fabriziopalma physicalinsightsintothzrectificationinmetaloxidesemiconductortransistors |