Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection

Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection

In this paper, a single-chip front-end (SCFE) operating in Ku-band (12–17 GHz) is presented. It is designed exploiting a GaN on SiC technology featured by 150 nm gate length provided by UMS foundry. This MMIC integrates high power and low noise amplification functions enabled by a single-pole double...

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Bibliographic Details
Main Authors: Francesco Scappaviva, Gianni Bosi, Andrea Biondi, Sara D’Angelo, Luca Cariani, Valeria Vadalà, Antonio Raffo, Davide Resca, Elisa Cipriani, Giorgio Vannini
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Electronics
Subjects:
single-chip front-end (SCFE)
gallium nitride (GaN)
switch
high-power amplifier (HPA)
low-noise amplifier (LNA)
transmit/receive module (TRM)
Online Access:https://www.mdpi.com/2079-9292/11/19/2998

Internet

https://www.mdpi.com/2079-9292/11/19/2998

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