Origin of performance improvement in solution-processed indium–gallium–zinc-oxide thin-film transistors having thin active layer and asymmetric dual gate structure
In this paper, we report the electrical characteristics of thin active layer indium–gallium–zinc-oxide thin-film transistors (IGZO TFTs) having an asymmetric dual gate structure. It was observed that the performance of IGZO TFTs significantly improved when the TFT is operated in the dual gate mode t...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-12-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0029185 |