High-<i>κ</i> van der Waals Oxide MoO<sub>3</sub> as Efficient Gate Dielectric for MoS<sub>2</sub> Field-Effect Transistors
Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO<sub>3</sub> is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectri...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/15/17/5859 |